IPB107N20NAXT INFINEON TECHNOLOGIES MOSFET N-Ch 200V 88A D2PAK-2
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IPB107N20NAXT (IPB107N20NAXT) |
| Specifications | MOSFET N-Ch 200V 88A D2PAK-2 |
| Unit Price | 7,22 EUR |
| Minimum Order Quantity | 1 |
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| Description | Infineon Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 88 A Vds - Drain-Source Breakdown Voltage: 200 V Rds On - Drain-Source Resistance: 9.6 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 65 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 300 W Mounting Style: SMD/SMT Package/Case: D2PAK-3 Packaging: Reel Brand: Infineon Technologies Ciss - Input Capacitance: 5.34 nF Configuration: Single Fall Time: 11 ns Minimum Operating Temperature: - 55 C Rise Time: 26 ns Series: IPB107N20 Factory Pack Quantity: 1000 Tradename: OptiMOS Typical Turn-Off Delay Time: 41 ns Part # Aliases: IPB107N20NAATMA1 SP000877674 |
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