IPB600N25N3 G INFINEON TECHNOLOGIES MOSFET N-CH 250V 25A TO263-3 N-Channel 250V 25A (Tc) 136W (Tc) Surface Mount PG-TO263-2
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IPB600N25N3 G (IPB600N25N3G) |
| Specifications | MOSFET N-CH 250V 25A TO263-3 N-Channel 250V 25A (Tc) 136W (Tc) Surface Mount PG-TO263-2 |
| Unit Price | 2,03 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 100V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 136W (Tc) Rds On (Max) @ Id, Vgs 60 mOhm @ 25A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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