IPP200N25N3 G INFINEON TECHNOLOGIES MOSFET N-CH 250V 64A TO220-3 N-Channel 250V 64A (Tc) 300W (Tc) Through Hole PG-TO-220-3

ProducentINFINEON TECHNOLOGIES
Part Number

IPP200N25N3 G (IPP200N25N3G)

Specifications

MOSFET N-CH 250V 64A TO220-3 N-Channel 250V 64A (Tc) 300W (Tc) Through Hole PG-TO-220-3

Unit Price6,49 EUR
Minimum Order Quantity500
Tariff No.
Lead Time84 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 64A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 300W (Tc) Rds On (Max) @ Id, Vgs 20 mOhm @ 64A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO-220-3 Package / Case TO-220-3
Datasheets
E-shop Coming Soon

E-shop Coming Soon
E-shop Coming Soon

E-shop Coming Soon
Related Parts
© 2015 WorldHNews.com