BSC018NE2LSATMA1 INFINEON TECHNOLOGIES MOSFET N-CH 25V 100A TDSON-8 N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8
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Producent | INFINEON TECHNOLOGIES | Part Number | BSC018NE2LSATMA1 (BSC018NE2LSATMA1) |
Specifications | MOSFET N-CH 25V 100A TDSON-8 N-Channel 25V 29A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8 |
Unit Price | 0,46 EUR |
Minimum Order Quantity | 5 |
Tariff No. | |
Lead Time | 112 weeks |
Weight and Dimension | |
Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 29A (Ta), 100A (Tc) Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 12V FET Feature - Power Dissipation (Max) 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs 1.8 mOhm @ 30A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8 Package / Case 8-PowerTDFN |
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