BSC010NE2LSI INFINEON TECHNOLOGIES MOSFET N-CH 25V 38A TDSON-8 N-Channel 25V 38A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8

ProducentINFINEON TECHNOLOGIES
Part Number

BSC010NE2LSI (BSC010NE2LSI)

Specifications

MOSFET N-CH 25V 38A TDSON-8 N-Channel 25V 38A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8

Unit Price1,51 EUR
Minimum Order Quantity1
Tariff No.
Lead Time112 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 38A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 12V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs 1.05 mOhm @ 30A, 10V Operating Temperature - Mounting Type Surface Mount Supplier Device Package PG-TDSON-8 Package / Case 8-PowerTDFN
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