BSC014NE2LSIXT INFINEON TECHNOLOGIES MOSFET N-Ch 25V 100A TDSON-8 OptiMOS

ProducentINFINEON TECHNOLOGIES
Part Number

BSC014NE2LSIXT (BSC014NE2LSIXT)

Specifications

MOSFET N-Ch 25V 100A TDSON-8 OptiMOS

Unit Price1,78 EUR
Minimum Order Quantity1
Tariff No.
Lead Time11 weeks
Weight and Dimension
DescriptionInfineon Product Category: MOSFET RoHS:  Details Id - Continuous Drain Current: 100 A Vds - Drain-Source Breakdown Voltage: 25 V Rds On - Drain-Source Resistance: 1.4 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 1.2 V to 2 V Qg - Gate Charge: 39 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 74 W Mounting Style: SMD/SMT Package/Case: TDSON-8 Packaging: Reel Brand: Infineon Technologies Configuration: Single Quad Drain Triple Source Fall Time: 3.6 ns Forward Transconductance - Min: 140 S Minimum Operating Temperature: - 55 C Rise Time: 5 ns Series: OptiMOS Factory Pack Quantity: 5000 Tradename: OptiMOS Typical Turn-Off Delay Time: 25 ns Part # Aliases: BSC014NE2LSIATMA1 SP000911336
Datasheets
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