IPS075N03LGAKMA1 INFINEON TECHNOLOGIES MOSFET N-CH 30V 50A TO251-3-11 N-Channel 30V 50A (Tc) 47W (Tc) Through Hole PG-TO251-3

ProducentINFINEON TECHNOLOGIES
Part Number

IPS075N03LGAKMA1 (IPS075N03LGAKMA1)

Specifications

MOSFET N-CH 30V 50A TO251-3-11 N-Channel 30V 50A (Tc) 47W (Tc) Through Hole PG-TO251-3

Unit Price0,18 EUR
Minimum Order Quantity1.5
Tariff No.
Lead Time
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 15V FET Feature - Power Dissipation (Max) 47W (Tc) Rds On (Max) @ Id, Vgs 7.5 mOhm @ 30A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Stub Leads, IPak
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