IPD50N03S2L06ATMA1 INFINEON TECHNOLOGIES MOSFET N-CH 30V 50A TO252-3 N-Channel 30V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11

ProducentINFINEON TECHNOLOGIES
Part Number

IPD50N03S2L06ATMA1 (IPD50N03S2L06ATMA1)

Specifications

MOSFET N-CH 30V 50A TO252-3 N-Channel 30V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11

Unit Price0,28 EUR
Minimum Order Quantity2.5
Tariff No.
Lead Time182 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Vgs(th) (Max) @ Id 2V @ 85µA Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V FET Feature - Power Dissipation (Max) 136W (Tc) Rds On (Max) @ Id, Vgs 6.4 mOhm @ 50A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3-11 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheets
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