BSC886N03LS G INFINEON TECHNOLOGIES MOSFET N-Ch 30V 65A TDSON-8

ProducentINFINEON TECHNOLOGIES
Part Number

BSC886N03LS G (BSC886N03LSG)

Specifications

MOSFET N-Ch 30V 65A TDSON-8

Unit Price1,01 EUR
Minimum Order Quantity1
Tariff No.
Lead Time8 weeks
Weight and Dimension
DescriptionInfineon Product Category: MOSFET RoHS:  Details Brand: Infineon Technologies Id - Continuous Drain Current: 65 A Vds - Drain-Source Breakdown Voltage: 30 V Rds On - Drain-Source Resistance: 6 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2.5 W Mounting Style: SMD/SMT Package/Case: TDSON-8 Packaging: Reel Channel Mode: Enhancement Configuration: Single Dual Drain Triple Source Fall Time: 3 ns Minimum Operating Temperature: - 55 C Rise Time: 3.2 ns Series: BSC886N03 Factory Pack Quantity: 5000 Typical Turn-Off Delay Time: 18 ns Part # Aliases: BSC886N03LSGATMA1 SP000475950
Datasheets
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