BSZ165N04NS G INFINEON TECHNOLOGIES MOSFET N-CH 40V 31A TSDSON-8 N-Channel 40V 8.9A (Ta), 31A (Tc) 2.1W (Ta), 25W (Tc) Surface Mount PG-TSDSON-8

ProducentINFINEON TECHNOLOGIES
Part Number

BSZ165N04NS G (BSZ165N04NSG)

Specifications

MOSFET N-CH 40V 31A TSDSON-8 N-Channel 40V 8.9A (Ta), 31A (Tc) 2.1W (Ta), 25W (Tc) Surface Mount PG-TSDSON-8

Unit Price0,24 EUR
Minimum Order Quantity5
Tariff No.
Lead Time70 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 8.9A (Ta), 31A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 10µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 840pF @ 20V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 2.1W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs 16.5 mOhm @ 20A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSDSON-8 Package / Case 8-PowerTDFN
Datasheets
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