IPP80N04S2H4AKSA2 INFINEON TECHNOLOGIES MOSFET N-CH 40V 80A TO220-3 N-Channel 40V 80A (Tc) 300W (Tc) Through Hole PG-TO220-3-1

ProducentINFINEON TECHNOLOGIES
Part Number

IPP80N04S2H4AKSA2 (IPP80N04S2H4AKSA2)

Specifications

MOSFET N-CH 40V 80A TO220-3 N-Channel 40V 80A (Tc) 300W (Tc) Through Hole PG-TO220-3-1

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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tube Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 148nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Rds On (Max) @ Id, Vgs 4 mOhm @ 80A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3
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