IPP039N04LGXKSA1 INFINEON TECHNOLOGIES MOSFET N-CH 40V 80A TO220-3 N-Channel 40V 80A (Tc) 94W (Tc) Through Hole PG-TO220-3-1

ProducentINFINEON TECHNOLOGIES
Part Number

IPP039N04LGXKSA1 (IPP039N04LGXKSA1)

Specifications

MOSFET N-CH 40V 80A TO220-3 N-Channel 40V 80A (Tc) 94W (Tc) Through Hole PG-TO220-3-1

Unit Price0,88 EUR
Minimum Order Quantity500
Tariff No.
Lead Time84 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2V @ 45µA Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 94W (Tc) Rds On (Max) @ Id, Vgs 3.9 mOhm @ 80A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3
Datasheets
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