IPD90N04S4-04 INFINEON TECHNOLOGIES MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2

ProducentINFINEON TECHNOLOGIES
Part Number

IPD90N04S4-04 (IPD90N04S404)

Specifications

MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2

Unit Price1,37 EUR
Minimum Order Quantity1
Tariff No.
Lead Time26 weeks
Weight and Dimension
DescriptionInfineon Product Category: MOSFET RoHS:  Details Id - Continuous Drain Current: 90 A Vds - Drain-Source Breakdown Voltage: 40 V Rds On - Drain-Source Resistance: 4.1 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 33 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 71 W Mounting Style: SMD/SMT Package/Case: DPAK-3 Packaging: Reel Brand: Infineon Technologies Channel Mode: Enhancement Fall Time: 11 ns Minimum Operating Temperature: - 55 C Rise Time: 11 ns Series: OptiMOS-T2 Factory Pack Quantity: 2500 Tradename: OptiMOS Typical Turn-Off Delay Time: 9 ns Part # Aliases: IPD90N04S404ATMA1 SP000646186
Datasheets
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