IPL65R190E6AUMA1 INFINEON TECHNOLOGIES MOSFET N-CH 4VSON N-Channel 650V 20.2A (Tc) 151W (Tc) Surface Mount PG-VSON-4

ProducentINFINEON TECHNOLOGIES
Part Number

IPL65R190E6AUMA1 (IPL65R190E6AUMA1)

Specifications

MOSFET N-CH 4VSON N-Channel 650V 20.2A (Tc) 151W (Tc) Surface Mount PG-VSON-4

Unit Price1,26 EUR
Minimum Order Quantity3
Tariff No.
Lead Time84 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ E6 Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 20.2A (Tc) Vgs(th) (Max) @ Id 3.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1620pF @ 100V FET Feature - Power Dissipation (Max) 151W (Tc) Rds On (Max) @ Id, Vgs 190 mOhm @ 7.3A, 10V Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-VSON-4 Package / Case 4-PowerTSFN
Datasheets
E-shop Coming Soon

E-shop Coming Soon
E-shop Coming Soon

E-shop Coming Soon
Related Parts
© 2015 WorldHNews.com