IPL65R660E6AUMA1 INFINEON TECHNOLOGIES MOSFET N-CH 4VSON N-Channel 650V 7A (Tc) 63W (Tc) Surface Mount Thin-Pak (8x8)
| |
|
Producent | INFINEON TECHNOLOGIES | Part Number | IPL65R660E6AUMA1 (IPL65R660E6AUMA1) |
Specifications | MOSFET N-CH 4VSON N-Channel 650V 7A (Tc) 63W (Tc) Surface Mount Thin-Pak (8x8) |
Unit Price | 0,72 EUR |
Minimum Order Quantity | 3 |
Tariff No. | |
Lead Time | 84 weeks |
Weight and Dimension | |
Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ E6 Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Vgs(th) (Max) @ Id 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V FET Feature - Power Dissipation (Max) 63W (Tc) Rds On (Max) @ Id, Vgs 660 mOhm @ 2.1A, 10V Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Thin-Pak (8x8) Package / Case 4-PowerTSFN |
Datasheets | |
E-shop Coming Soon
| |
E-shop Coming Soon
| |
Related Parts
| |
|