BSP299L6327HUSA1 INFINEON TECHNOLOGIES MOSFET N-CH 500V 400MA SOT-223 N-Channel 500V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

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BSP299L6327HUSA1 (BSP299L6327HUSA1)

Specifications

MOSFET N-CH 500V 400MA SOT-223 N-Channel 500V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series SIPMOS® Packaging Tape & Reel (TR) Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 400mA (Ta) Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta) Rds On (Max) @ Id, Vgs 4 Ohm @ 400mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA
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