IPI50R299CP INFINEON TECHNOLOGIES MOSFET N-Ch 550V 12A I2PAK-3 CoolMOS CP

ProducentINFINEON TECHNOLOGIES
Part Number

IPI50R299CP (IPI50R299CP)

Specifications

MOSFET N-Ch 550V 12A I2PAK-3 CoolMOS CP

Unit Price2,80 EUR
Minimum Order Quantity1
Tariff No.
Lead Time8 weeks
Weight and Dimension
DescriptionInfineon Product Category: MOSFET RoHS:  Details Id - Continuous Drain Current: 12 A Vds - Drain-Source Breakdown Voltage: 550 V Rds On - Drain-Source Resistance: 299 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Qg - Gate Charge: 23 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 104 W Mounting Style: Through Hole Package/Case: I2PAK-3 Packaging: Tube Brand: Infineon Technologies Configuration: Single Fall Time: 12 ns Minimum Operating Temperature: - 55 C Rise Time: 14 ns Series: CoolMOS CP Factory Pack Quantity: 500 Tradename: CoolMOS Typical Turn-Off Delay Time: 80 nS Part # Aliases: IPI50R299CPXKSA1 SP000523748
Datasheets
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