IRF1010NSTRRPBF INFINEON TECHNOLOGIES MOSFET N-CH 55V 85A D2PAK N-Channel 55V 85A (Tc) 180W (Tc) Surface Mount D2PAK

ProducentINFINEON TECHNOLOGIES
Part Number

IRF1010NSTRRPBF (IRF1010NSTRRPBF)

Specifications

MOSFET N-CH 55V 85A D2PAK N-Channel 55V 85A (Tc) 180W (Tc) Surface Mount D2PAK

Unit Price1,07 EUR
Minimum Order Quantity800
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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series HEXFET® Packaging Tape & Reel (TR) Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 85A (Tc) Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3210pF @ 25V FET Feature - Power Dissipation (Max) 180W (Tc) Rds On (Max) @ Id, Vgs 11 mOhm @ 43A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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