SPP11N60CFDHKSA1 INFINEON TECHNOLOGIES MOSFET N-CH 600V 11A TO-220 N-Channel 600V 11A (Tc) 125W (Tc) Through Hole PG-TO220-3-1

ProducentINFINEON TECHNOLOGIES
Part Number

SPP11N60CFDHKSA1 (SPP11N60CFDHKSA1)

Specifications

MOSFET N-CH 600V 11A TO-220 N-Channel 600V 11A (Tc) 125W (Tc) Through Hole PG-TO220-3-1

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Minimum Order Quantity500
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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Vgs(th) (Max) @ Id 5V @ 500µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Rds On (Max) @ Id, Vgs 440 mOhm @ 7A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3
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