SPP20N60C3HKSA1 INFINEON TECHNOLOGIES MOSFET N-CH 600V 20.7A TO220-3 N-Channel 600V 20.7A (Tc) 208W (Tc) Through Hole PG-TO220-3-1
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| Producent | INFINEON TECHNOLOGIES | | Part Number | SPP20N60C3HKSA1 (SPP20N60C3HKSA1) |
| Specifications | MOSFET N-CH 600V 20.7A TO220-3 N-Channel 600V 20.7A (Tc) 208W (Tc) Through Hole PG-TO220-3-1 |
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| Minimum Order Quantity | 500 |
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| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20.7A (Tc) Vgs(th) (Max) @ Id 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V FET Feature - Power Dissipation (Max) 208W (Tc) Rds On (Max) @ Id, Vgs 190 mOhm @ 13.1A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
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