IPB60R125CP INFINEON TECHNOLOGIES MOSFET N-CH 600V 25A TO263 N-Channel 600V 25A (Tc) 208W (Tc) Surface Mount PG-TO263-3-2

ProducentINFINEON TECHNOLOGIES
Part Number

IPB60R125CP (IPB60R125CP)

Specifications

MOSFET N-CH 600V 25A TO263 N-Channel 600V 25A (Tc) 208W (Tc) Surface Mount PG-TO263-3-2

Unit Price5,74 EUR
Minimum Order Quantity1
Tariff No.
Lead Time56 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.5V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 100V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 208W (Tc) Rds On (Max) @ Id, Vgs 125 mOhm @ 16A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Datasheets
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