IPD60R600CPATMA1 INFINEON TECHNOLOGIES MOSFET N-CH 600V 6.1A TO-252 N-Channel 600V 6.1A (Tc) 60W (Tc) Surface Mount PG-TO252-3

ProducentINFINEON TECHNOLOGIES
Part Number

IPD60R600CPATMA1 (IPD60R600CPATMA1)

Specifications

MOSFET N-CH 600V 6.1A TO-252 N-Channel 600V 6.1A (Tc) 60W (Tc) Surface Mount PG-TO252-3

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Minimum Order Quantity2.5
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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tape & Reel (TR) Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 6.1A (Tc) Vgs(th) (Max) @ Id 3.5V @ 220µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 550pF @ 100V FET Feature - Power Dissipation (Max) 60W (Tc) Rds On (Max) @ Id, Vgs 600 mOhm @ 3.3A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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