IPD60R600E6ATMA1 INFINEON TECHNOLOGIES MOSFET N-CH 600V 7.3A TO252 N-Channel 600V 7.3A (Tc) 63W (Tc) Surface Mount TO-252

ProducentINFINEON TECHNOLOGIES
Part Number

IPD60R600E6ATMA1 (IPD60R600E6ATMA1)

Specifications

MOSFET N-CH 600V 7.3A TO252 N-Channel 600V 7.3A (Tc) 63W (Tc) Surface Mount TO-252

Unit Price0,55 EUR
Minimum Order Quantity2.5
Tariff No.
Lead Time84 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ E6 Packaging Bulk Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7.3A (Tc) Vgs(th) (Max) @ Id 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V FET Feature - Power Dissipation (Max) 63W (Tc) Rds On (Max) @ Id, Vgs 600 mOhm @ 2.4A, 10V Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheets
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