IPD60R520C6 INFINEON TECHNOLOGIES MOSFET N-CH 600V 8.1A TO252 N-Channel 600V 8.1A (Tc) 66W (Tc) Surface Mount PG-TO252-3
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Producent | INFINEON TECHNOLOGIES | Part Number | IPD60R520C6 (IPD60R520C6) |
Specifications | MOSFET N-CH 600V 8.1A TO252 N-Channel 600V 8.1A (Tc) 66W (Tc) Surface Mount PG-TO252-3 |
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Minimum Order Quantity | 2.5 |
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Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tape & Reel (TR) Part Status Discontinued at Digi-Key FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 8.1A (Tc) Vgs(th) (Max) @ Id 3.5V @ 230µA Gate Charge (Qg) (Max) @ Vgs 23.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 512pF @ 100V FET Feature - Power Dissipation (Max) 66W (Tc) Rds On (Max) @ Id, Vgs 520 mOhm @ 2.8A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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