IPD60R380P6ATMA1 INFINEON TECHNOLOGIES MOSFET N-CH 600V DPAK-3 N-Channel 600V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3
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Producent | INFINEON TECHNOLOGIES | Part Number | IPD60R380P6ATMA1 (IPD60R380P6ATMA1) |
Specifications | MOSFET N-CH 600V DPAK-3 N-Channel 600V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3 |
Unit Price | 1,58 EUR |
Minimum Order Quantity | 1 |
Tariff No. | |
Lead Time | 84 weeks |
Weight and Dimension | |
Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ P6 Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 877pF @ 100V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 83W (Tc) Rds On (Max) @ Id, Vgs 380 mOhm @ 3.8A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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