IPU60R2K1CEBKMA1 INFINEON TECHNOLOGIES MOSFET N-CH 600V TO-251-3 N-Channel 600V 2.3A (Tc) 22W (Tc) Through Hole PG-TO251-3

ProducentINFINEON TECHNOLOGIES
Part Number

IPU60R2K1CEBKMA1 (IPU60R2K1CEBKMA1)

Specifications

MOSFET N-CH 600V TO-251-3 N-Channel 600V 2.3A (Tc) 22W (Tc) Through Hole PG-TO251-3

Unit Price0,44 EUR
Minimum Order Quantity1.5
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Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ CE Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.5V @ 60µA Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 140pF @ 100V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 22W (Tc) Rds On (Max) @ Id, Vgs 2.1 Ohm @ 760mA, 10V Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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