IPD60R800CEATMA1 INFINEON TECHNOLOGIES MOSFET N-CH 600V TO-252-3 N-Channel 600V 5.6A (Tc) 48W (Tc) Surface Mount TO-252-3
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IPD60R800CEATMA1 (IPD60R800CEATMA1) |
| Specifications | MOSFET N-CH 600V TO-252-3 N-Channel 600V 5.6A (Tc) 48W (Tc) Surface Mount TO-252-3 |
| Unit Price | 0,74 EUR |
| Minimum Order Quantity | 1 |
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| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ CE Packaging Cut Tape (CT) Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.5V @ 170µA Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 373pF @ 100V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 48W (Tc) Rds On (Max) @ Id, Vgs 800 mOhm @ 2A, 10V Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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