IPD25N06S4L30ATMA1 INFINEON TECHNOLOGIES MOSFET N-CH 60V 25A TO252-3 N-Channel 60V 25A (Tc) 29W (Tc) Surface Mount PG-TO252-3-11
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IPD25N06S4L30ATMA1 (IPD25N06S4L30ATMA1) |
| Specifications | MOSFET N-CH 60V 25A TO252-3 N-Channel 60V 25A (Tc) 29W (Tc) Surface Mount PG-TO252-3-11 |
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| Minimum Order Quantity | 1 |
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| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Discontinued at Digi-Key FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Vgs(th) (Max) @ Id 2.2V @ 8µA Gate Charge (Qg) (Max) @ Vgs 16.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 25V FET Feature - Power Dissipation (Max) 29W (Tc) Rds On (Max) @ Id, Vgs 30 mOhm @ 25A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3-11 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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