IPI020N06N INFINEON TECHNOLOGIES MOSFET N-CH 60V 29A TO262-3 N-Channel 60V 29A (Ta), 120A (Tc) 3W (Ta), 214W (Tc) Through Hole PG-TO262-3
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IPI020N06N (IPI020N06N) |
| Specifications | MOSFET N-CH 60V 29A TO262-3 N-Channel 60V 29A (Ta), 120A (Tc) 3W (Ta), 214W (Tc) Through Hole PG-TO262-3 |
| Unit Price | 4,01 EUR |
| Minimum Order Quantity | 500 |
| Tariff No. | |
| Lead Time | 84 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Bulk Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 29A (Ta), 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Vgs(th) (Max) @ Id 2.8V @ 143µA Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 7800pF @ 30V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 3W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs 2 mOhm @ 100A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
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