IPP093N06N3 G INFINEON TECHNOLOGIES MOSFET N-Ch 60V 50A TO220-3 OptiMOS 3

ProducentINFINEON TECHNOLOGIES
Part Number

IPP093N06N3 G (IPP093N06N3G)

Specifications

MOSFET N-Ch 60V 50A TO220-3 OptiMOS 3

Unit Price1,56 EUR
Minimum Order Quantity1
Tariff No.
Lead Time12 weeks
Weight and Dimension
DescriptionInfineon Product Category: MOSFET RoHS:  Details Brand: Infineon Technologies Id - Continuous Drain Current: 50 A Vds - Drain-Source Breakdown Voltage: 60 V Rds On - Drain-Source Resistance: 9 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 36 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 71 W Mounting Style: Through Hole Package/Case: TO-220-3 Packaging: Tube Channel Mode: Enhancement Configuration: Single Fall Time: 5 ns Forward Transconductance - Min: 55 S, 28 S Minimum Operating Temperature: - 55 C Rise Time: 40 ns Series: OptiMOS 3 Factory Pack Quantity: 500 Tradename: OptiMOS Typical Turn-Off Delay Time: 20 ns Part # Aliases: IPP093N06N3GXKSA1 SP000680852
Datasheets
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