IRF1010EZLPBF INFINEON TECHNOLOGIES MOSFET N-CH 60V 75A TO-262 N-Channel 60V 75A (Tc) 140W (Tc) Through Hole TO-262
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Producent | INFINEON TECHNOLOGIES | Part Number | IRF1010EZLPBF (IRF1010EZLPBF) |
Specifications | MOSFET N-CH 60V 75A TO-262 N-Channel 60V 75A (Tc) 140W (Tc) Through Hole TO-262 |
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Minimum Order Quantity | 50 |
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Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Vgs(th) (Max) @ Id 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2810pF @ 25V FET Feature - Power Dissipation (Max) 140W (Tc) Rds On (Max) @ Id, Vgs 8.5 mOhm @ 51A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
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