IRF1018ESLPBF INFINEON TECHNOLOGIES MOSFET N-CH 60V 79A TO-262 N-Channel 60V 79A (Tc) 110W (Tc) Through Hole TO-262
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IRF1018ESLPBF (IRF1018ESLPBF) |
| Specifications | MOSFET N-CH 60V 79A TO-262 N-Channel 60V 79A (Tc) 110W (Tc) Through Hole TO-262 |
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| Minimum Order Quantity | 50 |
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| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 79A (Tc) Vgs(th) (Max) @ Id 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 50V FET Feature - Power Dissipation (Max) 110W (Tc) Rds On (Max) @ Id, Vgs 8.4 mOhm @ 47A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
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