IPP052N06L3GHKSA1 INFINEON TECHNOLOGIES MOSFET N-CH 60V 80A TO220-3 N-Channel 60V 80A (Tc) 115W (Tc) Through Hole PG-TO-220-3
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IPP052N06L3GHKSA1 (IPP052N06L3GHKSA1) |
| Specifications | MOSFET N-CH 60V 80A TO220-3 N-Channel 60V 80A (Tc) 115W (Tc) Through Hole PG-TO-220-3 |
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| Minimum Order Quantity | 500 |
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| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tube Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Vgs(th) (Max) @ Id 2.2V @ 58µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 30V FET Feature - Power Dissipation (Max) 115W (Tc) Rds On (Max) @ Id, Vgs 5 mOhm @ 80A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO-220-3 Package / Case TO-220-3 |
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