IPL60R299CP INFINEON TECHNOLOGIES MOSFET N-CH 650V 11.1A 4VSON N-Channel 650V 11.1A (Tc) 96W (Tc) Surface Mount PG-VSON-4
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IPL60R299CP (IPL60R299CP) |
| Specifications | MOSFET N-CH 650V 11.1A 4VSON N-Channel 650V 11.1A (Tc) 96W (Tc) Surface Mount PG-VSON-4 |
| Unit Price | 2,88 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 56 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 11.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 96W (Tc) Rds On (Max) @ Id, Vgs 299 mOhm @ 6.6A, 10V Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-VSON-4 Package / Case 4-PowerTSFN |
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