IPD65R225C7 INFINEON TECHNOLOGIES MOSFET N-Ch 650V 11A DPAK-2 CoolMOS C7
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IPD65R225C7 (IPD65R225C7) |
| Specifications | MOSFET N-Ch 650V 11A DPAK-2 CoolMOS C7 |
| Unit Price | 3,57 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 16 weeks |
| Weight and Dimension | |
| Description | Infineon Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 11 A Vds - Drain-Source Breakdown Voltage: 650 V Rds On - Drain-Source Resistance: 225 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 3 V to 4 V Qg - Gate Charge: 20 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 63 W Mounting Style: SMD/SMT Package/Case: DPAK-3 Packaging: Reel Brand: Infineon Technologies Channel Mode: Enhancement Configuration: Single Fall Time: 10 ns Minimum Operating Temperature: - 55 C Rise Time: 6 ns Series: CoolMOS C7 Factory Pack Quantity: 2500 Tradename: CoolMOS Typical Turn-Off Delay Time: 48 ns Part # Aliases: IPD65R225C7ATMA1 SP000929430 |
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