IPP60R299CP INFINEON TECHNOLOGIES MOSFET N-Ch 650V 11A TO220-3 CoolMOS CP
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IPP60R299CP (IPP60R299CP) |
| Specifications | MOSFET N-Ch 650V 11A TO220-3 CoolMOS CP |
| Unit Price | 2,88 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 8 weeks |
| Weight and Dimension | |
| Description | Infineon Product Category: MOSFET RoHS: Details Brand: Infineon Technologies Id - Continuous Drain Current: 11 A Vds - Drain-Source Breakdown Voltage: 650 V Rds On - Drain-Source Resistance: 299 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 96 W Mounting Style: Through Hole Package/Case: TO-220-3 Packaging: Tube Channel Mode: Enhancement Configuration: Single Fall Time: 5 ns Minimum Operating Temperature: - 55 C Rise Time: 5 ns Series: CoolMOS CP Factory Pack Quantity: 500 Tradename: CoolMOS Typical Turn-Off Delay Time: 40 ns Part # Aliases: IPP60R299CPXKSA1 SP000084280 |
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