IPA60R250CPXKSA1 INFINEON TECHNOLOGIES MOSFET N-CH 650V 12A TO220-3 N-Channel 650V 12A (Tc) 33W (Tc) Through Hole PG-TO-220-FP

ProducentINFINEON TECHNOLOGIES
Part Number

IPA60R250CPXKSA1 (IPA60R250CPXKSA1)

Specifications

MOSFET N-CH 650V 12A TO220-3 N-Channel 650V 12A (Tc) 33W (Tc) Through Hole PG-TO-220-FP

Unit Price1,60 EUR
Minimum Order Quantity500
Tariff No.
Lead Time84 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Vgs(th) (Max) @ Id 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 100V FET Feature - Power Dissipation (Max) 33W (Tc) Rds On (Max) @ Id, Vgs 250 mOhm @ 7.8A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO-220-FP Package / Case TO-220-3 Full Pack
Datasheets
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