IPP65R150CFDXKSA1 INFINEON TECHNOLOGIES MOSFET N-CH 650V 22.4A TO220 N-Channel 650V 22.4A (Tc) 195.3W (Tc) Through Hole PG-TO-220-3

ProducentINFINEON TECHNOLOGIES
Part Number

IPP65R150CFDXKSA1 (IPP65R150CFDXKSA1)

Specifications

MOSFET N-CH 650V 22.4A TO220 N-Channel 650V 22.4A (Tc) 195.3W (Tc) Through Hole PG-TO-220-3

Unit Price3,43 EUR
Minimum Order Quantity500
Tariff No.
Lead Time112 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 22.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ 900µA Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2340pF @ 100V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 195.3W (Tc) Rds On (Max) @ Id, Vgs 150 mOhm @ 9.3A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO-220-3 Package / Case TO-220-3
Datasheets
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