SPD03N60C3 INFINEON TECHNOLOGIES MOSFET N-CH 650V 3.2A DPAK N-Channel 650V 3.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3

ProducentINFINEON TECHNOLOGIES
Part Number

SPD03N60C3 (SPD03N60C3)

Specifications

MOSFET N-CH 650V 3.2A DPAK N-Channel 650V 3.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3

Unit Price0,47 EUR
Minimum Order Quantity2.5
Tariff No.
Lead Time
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tape & Reel (TR) Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 3.2A (Tc) Vgs(th) (Max) @ Id 3.9V @ 135µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V FET Feature - Power Dissipation (Max) 38W (Tc) Rds On (Max) @ Id, Vgs 1.4 Ohm @ 2A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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