IPU60R1K4C6BKMA1 INFINEON TECHNOLOGIES MOSFET NCH 600V 3.2A TO251 N-Channel 600V 3.2A (Tc) 28.4W (Tc) Through Hole PG-TO251

ProducentINFINEON TECHNOLOGIES
Part Number

IPU60R1K4C6BKMA1 (IPU60R1K4C6BKMA1)

Specifications

MOSFET NCH 600V 3.2A TO251 N-Channel 600V 3.2A (Tc) 28.4W (Tc) Through Hole PG-TO251

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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Bulk Part Status Discontinued at Digi-Key FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 3.2A (Tc) Vgs(th) (Max) @ Id 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 200pF @ 100V FET Feature Super Junction Power Dissipation (Max) 28.4W (Tc) Rds On (Max) @ Id, Vgs 1.4 Ohm @ 1.1A, 10V Operating Temperature -55°C ~ 155°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251 Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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