IPP60R125C6 INFINEON TECHNOLOGIES MOSFET N-CH 600V 30A TO220 N-Channel 600V 30A (Tc) 219W (Tc) Through Hole PG-TO-220-3

ProducentINFINEON TECHNOLOGIES
Part Number

IPP60R125C6 (IPP60R125C6)

Specifications

MOSFET N-CH 600V 30A TO220 N-Channel 600V 30A (Tc) 219W (Tc) Through Hole PG-TO-220-3

Unit Price4,75 EUR
Minimum Order Quantity500
Tariff No.
Lead Time84 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2127pF @ 100V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 219W (Tc) Rds On (Max) @ Id, Vgs 125 mOhm @ 14.5A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO-220-3 Package / Case TO-220-3
Datasheets
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