SPW35N60C3 INFINEON TECHNOLOGIES MOSFET N-CH 650V 34.6A TO-247 N-Channel 650V 34.6A (Tc) 313W (Tc) Through Hole PG-TO247-3

ProducentINFINEON TECHNOLOGIES
Part Number

SPW35N60C3 (SPW35N60C3)

Specifications

MOSFET N-CH 650V 34.6A TO-247 N-Channel 650V 34.6A (Tc) 313W (Tc) Through Hole PG-TO247-3

Unit Price9,27 EUR
Minimum Order Quantity240
Tariff No.
Lead Time56 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 34.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.9V @ 1.9mA Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 313W (Tc) Rds On (Max) @ Id, Vgs 100 mOhm @ 21.9A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO247-3 Package / Case TO-247-3
Datasheets
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