IPB60R099C6 INFINEON TECHNOLOGIES MOSFET N-Ch 650V 38A D2PAK-2 CoolMOS C6

ProducentINFINEON TECHNOLOGIES
Part Number

IPB60R099C6 (IPB60R099C6)

Specifications

MOSFET N-Ch 650V 38A D2PAK-2 CoolMOS C6

Unit Price6,50 EUR
Minimum Order Quantity1
Tariff No.
Lead Time12 weeks
Weight and Dimension
DescriptionInfineon Product Category: MOSFET RoHS:  Details Id - Continuous Drain Current: 37.9 A Vds - Drain-Source Breakdown Voltage: 650 V Rds On - Drain-Source Resistance: 99 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Qg - Gate Charge: 119 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 278 W Mounting Style: SMD/SMT Package/Case: D2PAK-3 Packaging: Reel Brand: Infineon Technologies Fall Time: 6 ns Minimum Operating Temperature: - 55 C Rise Time: 12 ns Series: CoolMOS C6 Factory Pack Quantity: 1000 Tradename: CoolMOS Typical Turn-Off Delay Time: 75 ns Part # Aliases: IPB60R099C6ATMA1 SP000687468
Datasheets
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