IPP65R045C7XKSA1 INFINEON TECHNOLOGIES MOSFET N-CH 650V 46A TO-220-3 N-Channel 650V 46A (Tc) 227W (Tc) Through Hole PG-TO-220-3

ProducentINFINEON TECHNOLOGIES
Part Number

IPP65R045C7XKSA1 (IPP65R045C7XKSA1)

Specifications

MOSFET N-CH 650V 46A TO-220-3 N-Channel 650V 46A (Tc) 227W (Tc) Through Hole PG-TO-220-3

Unit Price15,10 EUR
Minimum Order Quantity500
Tariff No.
Lead Time140 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ C7 Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 46A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1.25mA Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 400V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 227W (Tc) Rds On (Max) @ Id, Vgs 45 mOhm @ 24.9A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO-220-3 Package / Case TO-220-3
Datasheets
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