IPD60R750E6 INFINEON TECHNOLOGIES MOSFET N-Ch 650V 5.7A DPAK-2 CoolMOS E6
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Producent | INFINEON TECHNOLOGIES | Part Number | IPD60R750E6 (IPD60R750E6) |
Specifications | MOSFET N-Ch 650V 5.7A DPAK-2 CoolMOS E6 |
Unit Price | 1,36 EUR |
Minimum Order Quantity | 1 |
Tariff No. | |
Lead Time | 12 weeks |
Weight and Dimension | |
Description | Infineon Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 5.7 A Vds - Drain-Source Breakdown Voltage: 650 V Rds On - Drain-Source Resistance: 680 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 48 W Mounting Style: SMD/SMT Package/Case: DPAK-3 Packaging: Reel Brand: Infineon Technologies Minimum Operating Temperature: - 55 C Series: CoolMOS E6 Factory Pack Quantity: 2500 Tradename: CoolMOS Part # Aliases: IPD60R750E6BTMA1 SP000801094 |
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