IPD60R750E6 INFINEON TECHNOLOGIES MOSFET N-Ch 650V 5.7A DPAK-2 CoolMOS E6

ProducentINFINEON TECHNOLOGIES
Part Number

IPD60R750E6 (IPD60R750E6)

Specifications

MOSFET N-Ch 650V 5.7A DPAK-2 CoolMOS E6

Unit Price1,36 EUR
Minimum Order Quantity1
Tariff No.
Lead Time12 weeks
Weight and Dimension
DescriptionInfineon Product Category: MOSFET RoHS:  Details Id - Continuous Drain Current: 5.7 A Vds - Drain-Source Breakdown Voltage: 650 V Rds On - Drain-Source Resistance: 680 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 48 W Mounting Style: SMD/SMT Package/Case: DPAK-3 Packaging: Reel Brand: Infineon Technologies Minimum Operating Temperature: - 55 C Series: CoolMOS E6 Factory Pack Quantity: 2500 Tradename: CoolMOS Part # Aliases: IPD60R750E6BTMA1 SP000801094
Datasheets
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