IPW65R019C7 INFINEON TECHNOLOGIES MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7

ProducentINFINEON TECHNOLOGIES
Part Number

IPW65R019C7 (IPW65R019C7)

Specifications

MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7

Unit Price18,47 EUR
Minimum Order Quantity240
Tariff No.
Lead Time16 weeks
Weight and Dimension
DescriptionInfineon Product Category: MOSFET RoHS:  Details Id - Continuous Drain Current: 75 A Vds - Drain-Source Breakdown Voltage: 650 V Rds On - Drain-Source Resistance: 19 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 3 V to 4 V Qg - Gate Charge: 215 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 446 W Mounting Style: Through Hole Package/Case: TO-247-3 Packaging: Tube Brand: Infineon Technologies Channel Mode: Enhancement Configuration: Single Fall Time: 5 ns Minimum Operating Temperature: - 55 C Rise Time: 27 ns Series: CoolMOS C7 Factory Pack Quantity: 240 Tradename: CoolMOS Typical Turn-Off Delay Time: 106 ns Part # Aliases: IPW65R019C7FKSA1 SP000928646
Datasheets
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