IPB60R385CP INFINEON TECHNOLOGIES MOSFET N-Ch 650V 9A D2PAK-2 CoolMOS CP

ProducentINFINEON TECHNOLOGIES
Part Number

IPB60R385CP (IPB60R385CP)

Specifications

MOSFET N-Ch 650V 9A D2PAK-2 CoolMOS CP

Unit Price2,88 EUR
Minimum Order Quantity1
Tariff No.
Lead Time8 weeks
Weight and Dimension
DescriptionInfineon Product Category: MOSFET RoHS:  Details Brand: Infineon Technologies Id - Continuous Drain Current: 9 A Vds - Drain-Source Breakdown Voltage: 650 V Rds On - Drain-Source Resistance: 385 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 83 W Mounting Style: SMD/SMT Package/Case: D2PAK-3 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 5 ns Minimum Operating Temperature: - 55 C Rise Time: 5 ns Series: CoolMOS CP Factory Pack Quantity: 1000 Tradename: CoolMOS Typical Turn-Off Delay Time: 40 ns Part # Aliases: IPB60R385CPATMA1 SP000228365
Datasheets
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