SPP07N60C3HKSA1 INFINEON TECHNOLOGIES MOSFET N-CH 650V TO-220AB N-Channel 650V 7.3A (Tc) 83W (Tc) Through Hole PG-TO-220-3

ProducentINFINEON TECHNOLOGIES
Part Number

SPP07N60C3HKSA1 (SPP07N60C3HKSA1)

Specifications

MOSFET N-CH 650V TO-220AB N-Channel 650V 7.3A (Tc) 83W (Tc) Through Hole PG-TO-220-3

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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 7.3A (Tc) Vgs(th) (Max) @ Id 3.9V @ 350µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 790pF @ 25V FET Feature - Power Dissipation (Max) 83W (Tc) Rds On (Max) @ Id, Vgs 600 mOhm @ 4.6A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO-220-3 Package / Case TO-220-3
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