IPA65R1K0CEXKSA1 INFINEON TECHNOLOGIES MOSFET N-CH 650V TO220-3 N-Channel 650V 7.2A (Tc) 68W (Tc) Through Hole PG-TO220 Full Pack
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| Producent | INFINEON TECHNOLOGIES | | Part Number | IPA65R1K0CEXKSA1 (IPA65R1K0CEXKSA1) |
| Specifications | MOSFET N-CH 650V TO220-3 N-Channel 650V 7.2A (Tc) 68W (Tc) Through Hole PG-TO220 Full Pack |
| Unit Price | 0,71 EUR |
| Minimum Order Quantity | 500 |
| Tariff No. | |
| Lead Time | 42 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 7.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs 15.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 328pF @ 100V Vgs (Max) ±20V FET Feature Super Junction Power Dissipation (Max) 68W (Tc) Rds On (Max) @ Id, Vgs 1 Ohm @ 1.5A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220 Full Pack Package / Case TO-220-3 Full Pack |
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