IPS65R1K5CEAKMA1 INFINEON TECHNOLOGIES MOSFET N-CH 650V TO-251-3 N-Channel 650V 3.1A (Tc) 28W (Tc) Through Hole TO-251
| |
|
| Producent | INFINEON TECHNOLOGIES | | Part Number | IPS65R1K5CEAKMA1 (IPS65R1K5CEAKMA1) |
| Specifications | MOSFET N-CH 650V TO-251-3 N-Channel 650V 3.1A (Tc) 28W (Tc) Through Hole TO-251 |
| Unit Price | 0,49 EUR |
| Minimum Order Quantity | 1.5 |
| Tariff No. | |
| Lead Time | 42 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Infineon Technologies Series CoolMOS™ CE Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 225pF @ 100V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 28W (Tc) Rds On (Max) @ Id, Vgs 1.5 Ohm @ 1A, 10V Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251 Package / Case TO-251-3 Stub Leads, IPak |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
